个人简介
一、个人简介
万茜，男，江苏宜兴人，现任江南大学物联网工程学院副教授，主要从事石墨烯等二维材料的研究；在graphene, h-BN, TMDCs等二维材料及其异质结的喷墨打印制备与化学气相沉积(CVD)研制方面，在二维材料转移工艺及其光电子器件领域等，作出了一系列原创性的研究工作，在Adv. Mater.，Adv. Funct. Mater.，Chem. Mater.，ACS Nano，Small等国际权威学术期刊上共发表SCI论文20余篇，被引超过1000次；主持国家自然科学基金，江苏省自然科学基金等多个科研项目；2015年获教育部高校科学研究优秀成果奖自然科学奖二等奖（第三完成人）；2017年入选江苏省“双创博士”；2018年度入选江苏省“六大人才高峰”，同年获得江苏省教育教学与研究成果奖三等奖（第二完成人）；2019年入选无锡市“太湖人才计划”。
二、教育经历：
2009.08 - 2013.08，香港中文大学电子工程学，哲学博士；
2008.09 - 2009.06，香港科技大学电子工程学，理学硕士；
2004.09 - 2008.06，南京大学电子信息科学与技术，理学学士。
三、工作经历：
2013.10.07 - 2016.10.08，香港中文大学电子工程学学系，博士后研究员；
2013.09.01 - 2013.10.06，香港中文大学电子工程学学系，兼任助理研究员；
2009.06.01 - 2013.08.31，香港中文大学电子工程学学系，初级助理研究员。
四、代表性论文
第一作者/共同一作发表SCI论文
[1] X. Wan, X. Miao, J. Yao, S. Wang, F. Shao, S. Xiao, R. Zhan, K. Chen, X. Zeng,
X. Gu, J. Xu, In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides
from Inkjet-Printed Aqueous Precursors.Adv. Mater.2021, 33(16), e2100260.
[2] X. Wan#, H. Li#, K. Chen, J. Xu, Towards Scalable Fabrications and Applications of 2D Layered Material-based Vertical and Lateral Heterostructures,Chem. Res. Chin. Univ.2020, 36(4), 525-550.
[3] X. Wan#, K. Chen#, Z. Chen, F. Xie, X. Zeng, W. Xie, J. Chen, J. Xu. Controlled Electrochemical Deposition of Large-Area MoS2 on Graphene for High-Responsivity Photodetectors.Adv. Funct. Mater.2017, 27(19): 1603998.
[4] K. Chen#, X. Wan#*, J. Xu.* Epitaxial Stitching and Stacking Growth of Atomically Thin Transition-Metal Dichalcogenides (TMDCs) Heterojunctions.Adv. Funct. Mater.2017, 27(19): 1603884.
[5] X. Wan#, K. Chen#, W. Xie, J. Wen, H. Chen, J. B. Xu. Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2 through a Self-Limited Growth Strategy by Interface Engineering.Small2016, 12(4): 438-445.
[6] K. Chen#, X. Wan#, W. Xie, J. Wen, Z. Kang, X. Zeng, H. Chen, J. Xu. Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy.Adv. Mater.2015, 27(41): 6431-6437.
[7] K. Chen#, X. Wan#, J. Wen, W. Xie, Z. Kang, X. Zeng, H. Chen, J. B. Xu. Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy.ACS Nano2015, 9(10): 9868-9876.
[8] X. Wan#, K. Chen#, J. Xu. Interface engineering for CVD graphene: current status and progress.Small2014, 10(22): 4443-4454.
[9] X. Wan, K. Chen, J. Du, D. Liu, J. Chen, X. Lai, W. Xie, J. Xu. Enhanced Performance and Fermi-Level Estimation of Coronene-Derived Graphene Transistors on Self-Assembled Monolayer Modified Substrates in Large Areas.J. Phys. Chem. C2013, 117(9): 4800-4807.
[10] K. Chen#, X. Wan#, J.-B. Xu. Controllable modulation of the electronic properties of graphene and silicene by interface engineering and pressure.J. Mater. Chem. C2013, 1(32): 4869.
[11] K. Chen#, X. Wan#, D. Liu, Z. Kang, W. Xie, J. Chen, Q. Miao, J. Xu. Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperature.Nanoscale2013, 5(13): 5784-5793.
[12] X. Wan#, K. Chen#, D. Liu, J. Chen, Q. Miao, J. Xu. High-Quality Large-Area Graphene from Dehydrogenated Polycyclic Aromatic Hydrocarbons.Chem. Mater.2012, 24(20): 3906-3915.
合作作者发表SCI论文
[1] H. Lai, R. He, X. Xu, T. Shi, X. Wan, H. Meng, K. Chen, Y. Zhou, Q. Chen, P. Liu, J. Chen, J. Xu, W. Xie,A self-driven approach for local ion intercalation in vdW crystals, Nanoscale 2020, 12(3), 1448-1454.
[2] X. Zhang, H. Nan, S. Xiao, X. Wan, X. Gu, A. Du, Z. Ni, K. K. Ostrikov,Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy, Nat. Commun. 2019, 10(1), 598.
[3] X. Zhang, S. Xiao, L. Shi, H. Nan, X. Wan, X. Gu, Z. Ni, K. Ostrikov,Large-size Mo1-xWxS2 and W1-xMoxS2 (x = 0–0.5) monolayers by confined-space chemical vapor deposition,Appl. Surf. Sci. 2018, 457, 591-597.
[4] X. Zhang, S. Xiao, H. Nan, H. Mo, X. Wan, X. Gu, K. K. Ostrikov,Controllable one-step growth of bilayer MoS2-WS2/WS2 heterostructures by chemical vapor deposition, Nanotechnology 2018, 29(45), 455707.
[5] X. Zhang, H. Nan, S. Xiao, X. Wan, Z. Ni, X. Gu, K. Ostrikov. Shape-Uniform, High-Quality Monolayered MoS2 Crystals for Gate-Tunable Photoluminescence.ACS Appl. Mater. Interfaces2017, 9(48): 42121-42130.
[6] Y. Wang, X. Du, J. Wang, M. Su, X. Wan, H. Meng, W. Xie, J. Xu, P. Liu. Growth of Large-Scale, Large-Size, Few-Layered alpha-MoO3 on SiO2 and Its Photoresponse Mechanism.ACS Appl Mater Interfaces2017, 9(6): 5543-5549.
[7] K. Chen, Z. Chen, X. Wan, Z. Zheng, F. Xie, W. Chen, X. Gui, H. Chen, W. Xie, J. Xu. A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T' Transition-Metal Telluride and Near-Field Nanooptical Properties.Adv. Mater.2017, 29(38): 1700704.
[8] T. Zhang, M. Long, K. Yan, X. Zeng, F. Zhou, Z. Chen, X. Wan, K. Chen, P. Liu, F. Li, T. Yu, W. Xie, J. Xu. Facet-Dependent Property of Sequentially Deposited Perovskite Thin Films: Chemical Origin and Self-Annihilation.ACS Appl. Mater. Interfaces2016, 8(47): 32366-32375.
[9] J. Wang, Z. Cheng, Z. Chen, X. Wan, B. Zhu, H. K. Tsang, C. Shu, J. Xu. High-responsivity graphene-on-silicon slot waveguide photodetectors.Nanoscale2016, 8(27): 13206-13211.
[10] L. Liu, K. Xu, X. Wan, J. Xu, C. Y. Wong, H. K. Tsang. Enhanced optical Kerr nonlinearity of MoS_2 on silicon waveguides.Photonics Res.2015, 3(5): 206-209.
[11] Z. Chen, Z. Cheng, J. Wang, X. Wan, C. Shu, H. K. Tsang, H. P. Ho, J.-B. Xu. High Responsivity, Broadband, and Fast Graphene/Silicon Photodetector in Photoconductor Mode.Adv.Opt. Mater.2015, 3(9): 1207-1214.
[12] W.-G. Xie, X. Lai, X.-M. Wang, X. Wan, M.-L. Yan, W.-J. Mai, P.-Y. Liu, J. Chen, J.-b. Xu. Influence of Annealing on Raman Spectrum of Graphene in Different Gaseous Environments.Spectrosc. Lett.2014, 47(6): 465-470.
[13] M. Wang, S. Zheng, X. Wan, Y. Su, N. Ke, N. Zhao, K. Y. Wong, J. Xu. Limit of Voc in polymeric bulk heterojunction solar cells predicted by a double-junction model.Sol. Energ. Mat. Sol. C.2013, 108(0): 17-21.
五、研究生教育
学术型研究生招生专业：微电子学与固体电子学；
专业型研究生招生专业：集成电路工程；
专业背景要求：电子信息科学与技术、微电子、材料、物理、化学等专业。
六、联系方式
通信地址：江苏省无锡市江阴市府前路299号江南大学霞客湾校区集成电路学院
邮编：214401
Email：xwan@jiangnan.edu.cn
